Explore topic-wise MCQs in Optical Communications.

This section includes 8 Mcqs, each offering curated multiple-choice questions to sharpen your Optical Communications knowledge and support exam preparation. Choose a topic below to get started.

1.

What is usually required by FETs to optimize the figure of merit?

A. Attenuation of barrier
B. Matching with the depletion region
C. Dispersion of the gate region
D. Matching with the detector
Answer» E.
Discussion
2.

A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________

A. 276Mbits<sup>-1</sup>
B. 274 Mbits<sup>-1</sup>
C. 278Mbits<sup>-1</sup>
D. 302Mbits<sup>-1</sup>
Answer» C. 278Mbits<sup>-1</sup>
Discussion
3.

Which receiver can be fabricated using PIN-FET hybrid approach?

A. Trans-impedance front end receiver
B. Gallium arsenide receiver
C. High-impedance front-end
D. Low-impedance front-end
Answer» B. Gallium arsenide receiver
Discussion
4.

It is difficult to achieve higher transmission rates using conventional __________

A. Voltage amplifier
B. Waveguide Structures
C. PIN-FET or APD receivers
D. MESFET
Answer» D. MESFET
Discussion
5.

PIN-FET hybrid receiver is designed for use at a transmission rate of _____________

A. 130 Mbits<sup>-1</sup>
B. 110 Mbits<sup>-1</sup>
C. 120 Mbits<sup>-1</sup>
D. 140 Mbits<sup>-1</sup>
Answer» E.
Discussion
6.

The PIN-FET hybrid receivers are a combination of ______________

A. Hybrid resistances and capacitances
B. Pin photodiode and low noise amplifier (GaAs MESFETs)
C. P-N photodiode and low noise amplifier (GaAs MESFETs)
D. Attenuator and low noise amplifier (GaAs MESFETs)
Answer» C. P-N photodiode and low noise amplifier (GaAs MESFETs)
Discussion
7.

Gallium arsenide MESFETs are advantageous than Silicon FETs.

A. True
B. False
Answer» B. False
Discussion
8.

The properties of a bipolar transistor are superior to the FET.

A. True
B. False
Answer» C.
Discussion