Explore topic-wise MCQs in Electronic Devices.

This section includes 23 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices knowledge and support exam preparation. Choose a topic below to get started.

1.

Refer to the following figure. Calculate V at I = 8 mA for k = 0.278 × 10 A/V.

A. 3.70 V
B. 5.36 V
C. 7.36 V
D. 2.36 V
Answer» B. 5.36 V
Discussion
2.

Referring to the following transfer curve, determine the level of V when the drain current is 20 mA.

A. 1.66 V
B. –1.66 V
C. 0.66 V
D. –0.66 V
Answer» B. –1.66 V
Discussion
3.

The level of V that results in I = 0 mA is defined by V = ________.

A. V
B. V
C. V
D. None of the above
Answer» C. V
Discussion
4.

Refer to the following curves. Calculate I at V = 1 V.

A. 8.167 mA
B. 4.167 mA
C. 6.167 mA
D. 0.616 mA
Answer» C. 6.167 mA
Discussion
5.

Refer to the following characteristic curve. Calculate the resistance of the FET at V = –0.25 V if r = 10 k.

A. 1.1378 k
B. 113.78
C. 11.378
D. 11.378 k
Answer» E.
Discussion
6.

Referring to this transfer curve. Calculate (using Shockley's equation) Vat I = 4mA.

A. 2.54 V
B. –2.54 V
C. –12 V
D. Undefined
Answer» C. –12 V
Discussion
7.

The drain current will always be one-fourth of I as long as the gate-to-source voltage is ________ the pinch-off value.

A. one-fourth
B. one-half
C. three-fourths
D. None of the above
Answer» C. three-fourths
Discussion
8.

What is the level of drain current I for gate-to-source voltages V less than (more negative than) the pinch-off level?

A. zero amperes
B. I
C. Negative value
D. Undefined
Answer» B. I
Discussion
9.

What is the level of I in an FET?

A. Zero amperes
B. Equal to I
C. Depends on V
D. Undefined
Answer» B. Equal to I
Discussion
10.

What is the ratio of I / I for V = 0.5 V?

A. 0.25
B. 0.5
C. 1
D. 0
Answer» B. 0.5
Discussion
11.

Referring to this transfer curve, determine I at V = 2 V.

A. 0.444 mA
B. 1.333 mA
C. 0.111 mA
D. 4.444 mA
Answer» B. 1.333 mA
Discussion
12.

Which of the following controls the level of I?

A. V
B. V
C. I
D. V
Answer» B. V
Discussion
13.

The FET is a ________ device depending solely on either electron (-channel) or hole (-channel) conduction.

A. unipolar
B. bipolar
C. tripolar
D. None of the above
Answer» B. bipolar
Discussion
14.

In an -channel depletion-type MOSFET the region of positive gate voltages on the drain or transfer characteristics is referred to as the ________ region with the region between cutoff and the saturation level of I referred to as the ________ region.

A. depletion, enhancement
B. enhancement, enhancement
C. enhancement, depletion
D. None of the above
Answer» D. None of the above
Discussion
15.

The level of ________ that results in the significant increase in drain current in enhancement-type MOSFETs is called threshold voltage V.

A. V
B. V
C. V
D. V
Answer» D. V
Discussion
16.

The silicon dioxide (SiO) layer used in a MOSFET is ________.

A. an insulator
B. a conductor
C. a semiconductor
D. None of the above
Answer» B. a conductor
Discussion
17.

As V becomes ________ negative, the slope of each curve in the characteristics becomes ________ horizontal corresponding with an increasing resistance level.

A. less, more
B. more, less
C. more, more
D. None of the above
Answer» D. None of the above
Discussion
18.

In an -channel enhancement-type MOSFET with a fixed value of V, the ________ the level of V, the ________ the saturation level for V.

A. higher, more
B. higher, less
C. lower, lower
D. None of the above
Answer» B. higher, less
Discussion
19.

The FET resistance in the ohmic region is ________ at V and ________ at the origin.

A. smallest, largest
B. largest, smallest
C. larger, smaller
D. smaller, larger
Answer» C. larger, smaller
Discussion
20.

In an FET transistor, the depletion region is ________ near the top of both -type materials.

A. wider
B. narrower
C. the same as the rest of the depletion region
D. None of the above
Answer» B. narrower
Discussion
21.

The pinch-off voltage continues to drop in a ________ manner as V becomes more and more negative.

A. linear
B. parabolic
C. cubic
D. None of the above
Answer» C. cubic
Discussion
22.

In a curve tracer, the ________ reveals the distance between the V curves for the n-channel device.

A. vertical sens.
B. horizontal sens.
C. Per step
D. g
Answer» D. g
Discussion
23.

The specification sheet provides ________ to calculate the value of for enhancement-type MOSFETs.

A. V
B. I
C. V
D. All of the above
Answer» E.
Discussion