Explore topic-wise MCQs in Electrical Engineering.

This section includes 72 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering knowledge and support exam preparation. Choose a topic below to get started.

1.

The channel of a JFET is between the ___________

A. ate and drain
B. rain and source
C. ate and source
D. nput and output
Answer» C. ate and source
2.

A JFET is similar in operation to ___________ valve

A. iode
B. entode
C. riode
D. etrode
Answer» C. riode
3.

In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers

A. lmost touch each other
B. ave large gap
C. ave moderate gap
D. one of the above
Answer» B. ave large gap
4.

The gate of a JFET is ___________ biased

A. everse
B. orward
C. everse as well as forward
D. one of the above
Answer» B. orward
5.

A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off) = -5 V. The value of the drain current is ___________

A. 0 mA
B. mA
C. 0 mA
D. 0 mA
Answer» B. mA
6.

A certain common source JFET has a voltage gain of 10. If the source bypass capacitor is removed, ___________

A. he voltage gain will increase
B. he transconductance will increase
C. he voltage gain will decrease
D. he Q-point will shift
Answer» D. he Q-point will shift
7.

The pinch-off voltage of a JFET is about ___________

A. V
B. .6 V
C. 5 V
D. 5 V
Answer» B. .6 V
8.

In a p-channel JFET, the charge carriers are ___________

A. lectrons
B. oles
C. oth electrons and holes
D. one of the above
Answer» C. oth electrons and holes
9.

The transconductance of a JFET ranges from ___________

A. 00 to 500 mA/V
B. 00 to 1000 mA/V
C. .5 to 30 mA/V
D. bove 1000 mA/V
Answer» D. bove 1000 mA/V
10.

A n-channel D-MOSFET with a positive VGS is operating in ___________

A. he depletion-mode
B. he enhancement-mode
C. ut off
D. aturation
Answer» C. ut off
11.

When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage

A. ecreases
B. ncreases
C. emains constant
D. one of the above
Answer» D. one of the above
12.

For VGS = 0 V, the drain current becomes constant when VDS exceeds

A. ut off
B. DD
C. P
D. V
Answer» D. V
13.

A MOSFET has ___________ terminals

A. wo
B. ive
C. our
D. hree
Answer» E.
14.

A common base configuration of a pnp transistor is analogous to ___________ of a JFET

A. ommon source configuration
B. ommon drain configuration
C. ommon gate configuration
D. one of the above
Answer» D. one of the above
15.

A JFET is also called ___________ transistor

A. nipolar
B. ipolar
C. nijunction
D. one of the above
Answer» B. ipolar
16.

The source terminal of a JEFT corresponds to ___________ of a vacuum tube

A. late
B. athode
C. rid
D. one of the above
Answer» C. rid
17.

A JFET has three terminals, namely ___________

A. athode, anode, grid
B. mitter, base, collector
C. ource, gate, drain
D. one of the above
Answer» D. one of the above
18.

A MOSFET uses the electric field of a ___________ to control the channel current

A. apacitor
B. attery
C. enerator
D. one of the above
Answer» B. attery
19.

In a certain CS JFET amplifier, RD= 1kΩ , RS= 560Ω , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ___________

A. 50
B. 5
C. 0.52
D. 0.5
Answer» E.
20.

If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ___________

A. s increased
B. s decreased
C. emains the same
D. one of the above
Answer» B. s decreased
21.

A MOSFET differs from a JFET mainly because ___________

A. f power rating
B. he MOSFET has two gates
C. he JFET has a pn junction
D. one of the above
Answer» D. one of the above
22.

A JFET has high input impedance because ___________

A. t is made of semiconductor material
B. nput is reverse biased
C. f impurity atoms
D. one of the above
Answer» C. f impurity atoms
23.

The constant-current region of a JFET lies between

A. ut off and saturation
B. ut off and pinch-off
C. and IDSS
D. inch-off and breakdown
Answer» E.
24.

The output characteristics of a JFET closely resemble the output characteristics of a ___________ valve

A. entode
B. etrode
C. riode
D. iode
Answer» B. etrode
25.

A CS JFET amplifier has a load resistance of 10 kΩ , RD= 820° . If gm= 5mS and Vin= 500 mV, the output signal voltage is ___________%!

A. 2.05 V
B. 25 V
C. 0.5 V
D. 1.89 V
Answer» E.
26.

In a common source JFET amplifier, the output voltage is ___________%!

A.
B. in phase with the input
Answer» B. in phase with the input
27.

A MOSFET is sometimes called ___________ JFET%!

A. many gate
B. open gate
C. insulated gate
D. shorted gate
Answer» D. shorted gate
28.

In a JFET, IDSS is known as ___________%!

A. drain to source current
B. drain to source current with gate shorted
C. drain to source current with gate open
D. none of the above
Answer» C. drain to source current with gate open
29.

The two important advantages of a JFET are ___________%!

A. high input impedance and square-law property
B. inexpensive and high output impedance
C. low input impedance and high output impedance
D. none of the above
Answer» B. inexpensive and high output impedance
30.

A MOSFET differs from a JFET mainly because ___________%!

A. of power rating
B. the MOSFET has two gates
C. the JFET has a pn junction
D. none of the above
Answer» D. none of the above
31.

*$_A MOSFET differs from a JFET mainly because ___________?

A. of power rating
B. the MOSFET has two gates
C. the JFET has a pn junction
D. none of the above
Answer» D. none of the above
32.

*/*_A MOSFET has ___________ terminals?

A. two
B. five
C. four
D. three
Answer» E.
33.

*/*_A n-channel D-MOSFET with a positive VGS is operating in ___________?

A. the depletion-mode
B. the enhancement-mode
C. cut off
D. saturation
Answer» C. cut off
34.

*/*_The pinch-off voltage of a JFET is about ___________?

A. 5 V
B. 0.6 V
C. 15 V
D. 25 V
Answer» B. 0.6 V
35.

*/*_The gate of a JFET is ___________ biased?

A. reverse
B. forward
C. reverse as well as forward
D. none of the above
Answer» B. forward
36.

*/*_The channel of a JFET is between the ___________?

A. gate and drain
B. drain and source
C. gate and source
D. input and output
Answer» C. gate and source
37.

*/*_In a certain CS JFET amplifier, RD= 1kΩ , RS= 560Ω , VDD=10V and gm= 4500 µS. If the source resistor is completely bypassed, the voltage gain is ___________?

A. 450
B. 45
C. 2.52
D. 4.5
Answer» E.
38.

*/*_The source terminal of a JEFT corresponds to ___________ of a vacuum tube?

A. plate
B. cathode
C. grid
D. none of the above
Answer» C. grid
39.

*/*_A JFET has high input impedance because ___________?

A. it is made of semiconductor material
B. input is reverse biased
C. of impurity atoms
D. none of the above
Answer» C. of impurity atoms
40.

%_A JFET has high input impedance because ____________%

A. it is made of semiconductor material
B. input is reverse biased
C. of impurity atoms
D. none of the above
Answer» C. of impurity atoms
41.

_ A common base configuration of a pnp transistor is analogous to ___________ of a JFET$?

A. common source configuration
B. common drain configuration
C. common gate configuration
D. none of the above
Answer» D. none of the above
42.

_ When drain voltage equals the pinch-off-voltage, then drain current ___________ with the increase in drain voltage$?

A. decreases
B. increases
C. remains constant
D. none of the above
Answer» D. none of the above
43.

_ In a p-channel JFET, the charge carriers are ___________$?

A. electrons
B. holes
C. both electrons and holes
D. none of the above
Answer» C. both electrons and holes
44.

_ A certain D-MOSFET is biased at VGS = 0 V. Its data sheet specifies IDSS = 20mA and VGS(off) = -5 V. The value of the drain current is ___________$?

A. 20 mA
B. 0 mA
C. 40 mA
D. 10 mA
Answer» B. 0 mA
45.

_ A JFET is similar in operation to ___________ valve$?

A. diode
B. pentode
C. triode
D. tetrode
Answer» C. triode
46.

_ In a certain common source D-MOSFET amplifier, Vds =3.2 V r.m. and Vgs = 280 mV r.m.s. The voltage gain is ___________$?

A. 1
B. 11.4
C. 8.75
D. 3.2
Answer» C. 8.75
47.

_ A JFET has three terminals, namely ___________$?

A. cathode, anode, grid
B. emitter, base, collector
C. source, gate, drain
D. none of the above
Answer» D. none of the above
48.

__The constant-current region of a JFET lies between__

A. cut off and saturation
B. cut off and pinch-off
C. o and IDSS
D. pinch-off and breakdown
Answer» E.
49.

A JFET is also called ___________ transistor$?

A. unipolar
B. bipolar
C. unijunction
D. none of the above
Answer» B. bipolar
50.

For VGS = 0 V, the drain current becomes constant when VDS exceeds$?

A. cut off
B. VDD
C. VP
D. o V
Answer» D. o V