MCQOPTIONS
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MCQOPTIONS
This section includes 3 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits Questions and Answers knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
Consider a bar of silicon having carrier concentration n0=1015 cm-3, ni=1010cm-3 and p0=105cm-3. Calculate the quasi-fermi energy level in eV? |
| A. | a)0.1985 |
| B. | b)0.15 |
| C. | c)0.1792 |
| D. | d)0.1 |
| Answer» D. d)0.1 | |
| 2. |
Consider a bar of silicon having carrier concentration n0=1015 cm-3 and ni=1010cm-3. Assume the excess carrier concentrations to be n=1013cm-3, calculate the quasi-fermi energy level at T=300K? |
| A. | a)0.2982 eV |
| B. | b)0.2984 eV |
| C. | c)0.5971 eV |
| D. | d)1Ev |
| Answer» C. c)0.5971 eV | |
| 3. |
Where will be the position of the Fermi level of the n-type material when ND=NA? |
| A. | a)Ec |
| B. | b)Ev |
| C. | c)Ef |
| D. | d)Efi |
| Answer» B. b)Ev | |