MCQOPTIONS

Explore topic-wise MCQs in Electronic Devices and Circuits.

This section includes 4 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.

1.	Consider a bar of silicon having carrier concentration n0=10¹⁵ cm^-3, ni=10¹⁰cm^-3 and p0=10⁵cm^-3. Calculate the quasi-fermi energy level in eV?
A.	t0.1985
B.	t0.15
C.	t0.1792
D.	t0.1
Answer» D. t0.1

2.	Consider a bar of silicon having carrier concentration n0=10¹⁵ cm^-3 and ni=10¹⁰cm^-3. Assume the excess carrier concentrations to be n=10¹³cm^-3, calculate the quasi-fermi energy level at T=300K?
A.	t0.2982 eV
B.	t0.2984 eV
C.	t0.5971 eV
D.	t1Ev
Answer» C. t0.5971 eV

3.	Ef lies in the middle of the energy level indicates the unequal concentration of the holes and the electrons?
A.	tTrue
B.	tFalse
Answer» C.

4.	If the excess carriers are created in the semiconductor, then identify the correct energy level diagram.
A.	<a href="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6.png"><img alt="The excess carriers are created in the semiconductor - option a" class="alignnone size-full wp-image-149995" height="165" src="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6.png" width="246"/></a>
B.	<a href="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6a.png"><img alt="The excess carriers are created in the semiconductor - option b" class="alignnone size-full wp-image-149996" height="163" src="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6a.png" width="254"/></a>
C.	<a href="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6b.png"><img alt="The excess carriers are created in the semiconductor - option c" class="alignnone size-full wp-image-149997" height="158" src="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6b.png" width="248"/></a>
D.	<a href="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6c.png"><img alt="The excess carriers are created in the semiconductor - option d" class="alignnone size-full wp-image-149998" height="163" src="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6c.png" width="249"/></a>
Answer» B. <a href="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6a.png"><img alt="The excess carriers are created in the semiconductor - option b" class="alignnone size-full wp-image-149996" height="163" src="https://www.sanfoundry.com/wp-content/uploads/2017/06/electronic-devices-circuits-questions-answers-fermi-level-semiconductor-impurities-q6a.png" width="254"/></a>