MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Analog Electronic Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
In an n - p - n transistor, the majority carriers in the base are |
| A. | electrons |
| B. | holes |
| C. | both holes and electrons |
| D. | either holes or electrons |
| Answer» B. holes | |
| 2. |
The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm 2 /sec. The diffusion length is |
| A. | 0.1 cm |
| B. | 0.01 cm |
| C. | 0.0141 cm |
| D. | 1 cm |
| Answer» B. 0.01 cm | |
| 3. |
A p - n junction diode has |
| A. | low forward and high reverse resistance |
| B. | a non-linear v - i characteristics |
| C. | zero forward current till the forward voltage reaches cut in value |
| D. | all of the above |
| Answer» E. | |
| 4. |
The v - i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification |
| A. | AB |
| B. | BC |
| C. | CD |
| D. | BD |
| Answer» C. CD | |
| 5. |
A particular green LED emits light of wavelength 5490, Ã…, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10 -34 J sec. |
| A. | 2.26 eV |
| B. | 1.98 eV |
| C. | 1.17 eV |
| D. | 0.74 eV |
| Answer» B. 1.98 eV | |
| 6. |
In an n - p - n transistor biased for operation in forward active region |
| A. | emitter is positive with respect to base |
| B. | collector is positive with respect to base |
| C. | base is positive with respect to emitter and collector is positive with respect to base |
| D. | none of the above |
| Answer» D. none of the above | |
| 7. |
A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately. |
| A. | 30 pA |
| B. | 40 pA |
| C. | 50 pA |
| D. | 60 pA |
| Answer» C. 50 pA | |
| 8. |
A transistor has two p - n junctions. The batteries should be connected such that |
| A. | both junctions are forward biased |
| B. | both junctions are reverse biased |
| C. | one junction is forward biased and the other is reverse biased |
| D. | none of the above |
| Answer» D. none of the above | |
| 9. |
In the circuit of figure the function of resistor R and diode D are |
| A. | to limit the current and to protect LED against over voltage |
| B. | to limit the voltage and to protect LED against over current |
| C. | to limit the current and protect LED against reverse breakdown voltage. |
| D. | none of the above. |
| Answer» D. none of the above. | |
| 10. |
In p - n - p transistor the current I E has two components viz. I EP due to injection of holes from p -region to n -region and I E due to injection of electrons from n -region to p -region. Then |
| A. | I E p and I E n are almost equal |
| B. | I E p >> I E n |
| C. | I E n >> I E p |
| D. | either (a) or (c) |
| Answer» C. I E n >> I E p | |