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This section includes 286 Mcqs, each offering curated multiple-choice questions to sharpen your Electrical Engineering materials knowledge and support exam preparation. Choose a topic below to get started.
| 101. |
Which of the following statements relate to the Hall effect? |
| A. | 1, 2 and 3 |
| B. | 2 and 4 |
| C. | 1, 3 and 4 |
| D. | 1, 2 and 4 |
| Answer» E. | |
| 102. |
Consider the following statements: Impurity diffusion is used in semiconductor to control the conductivity. The nature of the impurity profile should be such that the |
| A. | 1, 2 and 3 |
| B. | 1 and 3 |
| C. | 2 and 3 |
| D. | 1 and 2 |
| Answer» E. | |
| 103. |
The conductivity of a semiconductor crystal due to any current carrier is NOT proportional to: |
| A. | mobility of the carrier |
| B. | effective density of states in the conduction band |
| C. | electronic charge |
| D. | surface states in the semiconductor |
| Answer» E. | |
| 104. |
Consider the following statements: In a transformer, the core material should have low |
| A. | 1 and 2 |
| B. | 2 and 3 |
| C. | 1 and 3 |
| D. | 1, 2 and 3 |
| Answer» B. 2 and 3 | |
| 105. |
Gold, which has an atomic radius of 0.144 nm, crystallizes in a FCC structure. The lattice parameter of gold is: |
| A. | the same as the atomic radius |
| B. | 0.407 nm |
| C. | 0.333 nm |
| D. | 0.576 nm |
| Answer» C. 0.333 nm | |
| 106. |
When a semiconductor bar is heated at one end, a voltage across the bar is developed. If the heated end is positive, the semiconductor is: |
| A. | p-type |
| B. | n-type |
| C. | Intrinsic |
| D. | Highly degenerate |
| Answer» C. Intrinsic | |
| 107. |
When copper is added to silver in small quantity so as to form an alloy, the resistivity of such an alloy is: |
| A. | equal to the resistivity of copper |
| B. | equal to the resistivity of silver |
| C. | greater than the resistivity of copper |
| D. | in between the resistivity of silver and copper |
| Answer» D. in between the resistivity of silver and copper | |
| 108. |
When BCC iron is heated, it charges to FCC iron resulting in: |
| A. | contraction in volume |
| B. | increase in volume |
| C. | no change in volume |
| D. | crack in the material |
| Answer» B. increase in volume | |
| 109. |
A fine powder of a refractory metal may be added to a molten metal prior to solidification of the metal. The fine powder may act to: |
| A. | produce a single crystal. This is called a Czochalski technique. |
| B. | induce homogeneous nucleation in the molten metal |
| C. | reduce the average grain size of the final, solidified metal |
| D. | produce large numbers of moving dislocations in the crystal |
| Answer» D. produce large numbers of moving dislocations in the crystal | |
| 110. |
Hall effect device can be used to: |
| A. | multiply two signals |
| B. | divide one signal by another on an instantaneous basis |
| C. | add two signals |
| D. | Subtract one signal from another |
| Answer» B. divide one signal by another on an instantaneous basis | |
| 111. |
Electron mobility and life-time in a semiconductor at room temperature are respectively 0.36m |
| A. | 3.13 mm |
| B. | 1.77 mm |
| C. | 3.55 mm |
| D. | 3.13 cm |
| Answer» C. 3.55 mm | |
| 112. |
For which of the following semiconductors, resistance does not follow Ohm s law over some specific range of the applied voltage? |
| A. | 1, 2 and 3 |
| B. | 1 and 2 |
| C. | 2 and 3 |
| D. | 1 and 3 |
| Answer» D. 1 and 3 | |
| 113. |
Consider the following statements: The dielectric constant of an insulator depends on |
| A. | 1 and 2 |
| B. | 1 and 3 |
| C. | 2 and 3 |
| D. | 3 and 4 |
| Answer» D. 3 and 4 | |
| 114. |
Ferromagnetics owe their properties to: |
| A. | Filled inner sub-shells |
| B. | Vacant inner sub-shells |
| C. | Partially filled inner sub-shells |
| D. | All the sub-shells equally filled |
| Answer» D. All the sub-shells equally filled | |
| 115. |
The temperature at or above which a ferromagnetic material becomes paramagnetic is called: |
| A. | Critical temperature |
| B. | Inversion temperature |
| C. | Curie temperature |
| D. | Debye temperature |
| Answer» D. Debye temperature | |
| 116. |
Which of the following statements are correct for ceramic materials? |
| A. | 1, 2 and 3 |
| B. | 1 and 2 |
| C. | 2 and 3 |
| D. | 1 and 3 |
| Answer» B. 1 and 2 | |
| 117. |
For a medium carbon steel, having a 0.50% carbon content, slow cooling of austenite will cause austenite to transform to carbide and ferrite. Rapid quenching of austenite can result in: |
| A. | formation of martensite, which produces a very hard and brittle steel |
| B. | retention of austenite, even at room temperature which gives a very ductile and tough steel |
| C. | formation of large carbide particles near the grain boundaries in the steel, which makes the steel brittle but very tough |
| D. | retention of austenite, even at room temperature, which gives a very brittle and hard steel |
| Answer» B. retention of austenite, even at room temperature which gives a very ductile and tough steel | |
| 118. |
The effect of temperature on the strength of linear thermoplastics is that: |
| A. | as the temperature of thermoplastics increases, they cure by cross-linking and forming a three-dimensional network of covalent bonds, increasing the strength of the thermoplastic |
| B. | same effect as (a), except that as the temperature gets sufficiently high, the covalently, bonded network weakens and eventually burns |
| C. | nothing happens. Temperature doesn t affect thermoplastics |
| D. | as the temperature of thermoplastics is increased, the secondary atomic bonds weaken and the material softens |
| Answer» E. | |
| 119. |
In the selection of an opaque surface to act as collector of solar energy. It would be desirable for the surface to have which of the following sets of characteristics? |
| A. | Absorptivity for radiation in the visible spectrum = high emissivity for low temperature radiation = low convective heat transfer coefficient = low |
| B. | Absorptivity for radiation in the visible spectrum = high emissivity for low temperature radiation = high convective heat transfer coefficient = low |
| C. | Absorptivity for radiation in the visible spectrum = low emissivity for low temperature radiation = high convective heat transfer coefficients = high |
| D. | Absorptivity for radiation in the visible spectrum = low emmissivity for low temperature radiation = high convective heat transfer coefficient = low |
| Answer» B. Absorptivity for radiation in the visible spectrum = high emissivity for low temperature radiation = high convective heat transfer coefficient = low | |
| 120. |
Thermosetting plastics have in general: |
| A. | molecular chains that slip past one another when the material is heated sufficiently |
| B. | high strengths and low ductilities |
| C. | a covalently bonded 3-dimensional network or crosslinked structure |
| D. | both (A) and (C) |
| Answer» E. | |
| 121. |
Wood is a: |
| A. | granular material |
| B. | cellular material |
| C. | homogeneous material |
| D. | amorphous material |
| Answer» C. homogeneous material | |
| 122. |
An electrician s solder is generally an alloy of: |
| A. | iron and mercury |
| B. | zinc and copper |
| C. | copper and lead |
| D. | tin and lead |
| Answer» E. | |
| 123. |
The tunnel effect refers to: |
| A. | the migration of conducting electrons in a magnetic field |
| B. | the use of lasers in surveying |
| C. | the ability of electrons to exist on both sides of a large energy barrier |
| D. | the existence of cathode rays in a vacuum |
| Answer» D. the existence of cathode rays in a vacuum | |
| 124. |
A p-type germanium semiconductor is doped with: |
| A. | Selenium |
| B. | Gallium |
| C. | Arsenic |
| D. | Silicon |
| Answer» C. Arsenic | |
| 125. |
The decreasing order of the electrical resistivities of nichrome, silicon and diamond is: |
| A. | nichrome, silicon, diamond |
| B. | silicon, diamond, nichrome |
| C. | diamond, nichrome, silicon |
| D. | diamond, silicon, nichrome |
| Answer» E. | |
| 126. |
If the lattice temperature is increased, then the Hall coefficient of a semiconductor will: |
| A. | decrease |
| B. | increase |
| C. | first increase to peak and then decrease |
| D. | remain constant |
| Answer» D. remain constant | |
| 127. |
The Hall coefficient of an intrinsic semiconductor is: |
| A. | positive under all conditions |
| B. | negative under all conditions |
| C. | zero under all conditions |
| D. | zero at 0 K |
| Answer» C. zero under all conditions | |
| 128. |
The room temperature resistivity (in ohm-metre) of pure silicon is: |
| A. | 3000 |
| B. | 300 |
| C. | 30 |
| D. | 3 |
| Answer» B. 300 | |
| 129. |
Some magnetic materials may be classified on the basis of: |
| A. | 1, 3 and 4 |
| B. | 2, 3 and 6 |
| C. | 3, 4 and 5 |
| D. | 3, 5 and 6 |
| Answer» B. 2, 3 and 6 | |
| 130. |
A type I superconductor maintained at a temperature T < T |
| A. | perfect diamagnetism |
| B. | partial diamagnetism |
| C. | perfect paramagnetism |
| D. | partial paramagnetism |
| Answer» B. partial diamagnetism | |
| 131. |
Consider the following metals: |
| A. | 4, 3, 1, 2 |
| B. | 3, 4, 2, 1 |
| C. | 4, 3, 2, 1 |
| D. | 3, 4, 1, 2 |
| Answer» C. 4, 3, 2, 1 | |
| 132. |
What type of magnetic behaviour is observed in a type-I superconductor? |
| A. | Perfect diamagnetism |
| B. | Perfect paramagnetism |
| C. | Perfect ferromagnetism |
| D. | Perfect ferrimagnetism |
| Answer» B. Perfect paramagnetism | |
| 133. |
Some of the characterising parameters of a materials are: |
| A. | 1 and 3 |
| B. | 3 and 2 |
| C. | 4 and 3 |
| D. | 1 and 2 |
| Answer» C. 4 and 3 | |
| 134. |
The carbon percentage is least in: |
| A. | low carbon steel |
| B. | wrought iron |
| C. | cast iron |
| D. | malleable iron |
| Answer» B. wrought iron | |
| 135. |
Superconducting metal in a superconducting state has relative permeability of: |
| A. | zero |
| B. | one |
| C. | negative |
| D. | more than one |
| Answer» B. one | |
| 136. |
If the domain walls in a magnetic material can be easily moved, the material displays: |
| A. | permanent magnetic behaviour |
| B. | high flux density |
| C. | high permeability |
| D. | none of the above |
| Answer» D. none of the above | |
| 137. |
A paramagnetic material is used in an energy conversion process in which the following events occur: |
| A. | 3, 4, 2, 1 |
| B. | 1, 4, 2, 3 |
| C. | 1, 2, 4, 3 |
| D. | 3, 2, 4, 1 |
| Answer» E. | |
| 138. |
Which of the following pair(s) is/are correctly matched? |
| A. | only 2 |
| B. | 1 and 2 |
| C. | 1 and 3 |
| D. | 2 and 3 |
| Answer» D. 2 and 3 | |
| 139. |
The number of stress coefficients or constants which characterize a piezoelectric material is: |
| A. | 24 |
| B. | 18 |
| C. | 9 |
| D. | 3 |
| Answer» B. 18 | |
| 140. |
A P-type semiconductor considered as a whole is: |
| A. | electrically neutral |
| B. | positively charged |
| C. | negatively charged |
| D. | None of these |
| Answer» B. positively charged | |
| 141. |
The highest mobility is associated with: |
| A. | holes |
| B. | electrons |
| C. | positive ion |
| D. | negative ion |
| Answer» E. | |
| 142. |
The Miller indices of the diagonal plane of a cube are: |
| A. | 110 |
| B. | 111 |
| C. | 100 |
| D. | 000 |
| Answer» B. 111 | |
| 143. |
The crystal structure of most of the common metals is: |
| A. | hexagonal |
| B. | cubic |
| C. | orthorhombic |
| D. | None of these |
| Answer» C. orthorhombic | |
| 144. |
The nature of atomic bond found in diamond is: |
| A. | ionic |
| B. | covalent |
| C. | metallic |
| D. | None of these |
| Answer» C. metallic | |
| 145. |
The overall electrical neutrality is maintained in: |
| A. | Frenkel s defect |
| B. | screw dislocation |
| C. | low angle boundary defect |
| D. | none of the above |
| Answer» B. screw dislocation | |
| 146. |
Line imperfection in a crystal is called: |
| A. | Schottky defect |
| B. | Frenkel defect |
| C. | Edge dislocation |
| D. | Miller defect |
| Answer» D. Miller defect | |
| 147. |
Dislocations in materials are: |
| A. | point defect |
| B. | line defect |
| C. | planer defect |
| D. | surface defects |
| Answer» C. planer defect | |
| 148. |
Hall effect: |
| A. | describes the behaviour of minority carriers in a semiconductor under the influence of a magnetic field |
| B. | can be used to find whether a semiconductor is of Ntype or P-type |
| C. | cannot be used to determine the concentration of carriers and their mobility |
| D. | is a phenomenon applicable to semiconductors alone |
| Answer» C. cannot be used to determine the concentration of carriers and their mobility | |
| 149. |
Bakelite is a: |
| A. | acrylate |
| B. | silicon varnish |
| C. | thermoplastic synthetic resin |
| D. | phenol formaldehyde resin |
| Answer» E. | |
| 150. |
All of the following substances are hygroscopic EXCEPT: |
| A. | Silica gel |
| B. | Calcium chloride |
| C. | Sulphuric acid |
| D. | Sodium chloride |
| Answer» E. | |