Explore topic-wise MCQs in Power Electronics.

This section includes 14 Mcqs, each offering curated multiple-choice questions to sharpen your Power Electronics knowledge and support exam preparation. Choose a topic below to get started.

1.

In the p & n regions of the p-n junction the _________ & the ___________ are the minority charge carriers respectively.

A. holes, holes
B. electrons, electrons
C. holes, electrons
D. electrons, holes
Answer» E.
Discussion
2.

In case of a practical p-n junction diode, the rise in the junction temperature ___________

A. decreases the width of the depletion region
B. increases the barrier potential
C. increases the width of the depletion region
D. width of the depletion region increases but the barrier potential remains constant
Answer» B. increases the barrier potential
Discussion
3.

Lets assume that the doping density in the p-region is 10-9 cm-3 & in the n-region is 10-17cm-3, as such the p-n junction so formed would be termed as a

A. p– n–
B. p+ n–
C. p– n+
D. p+ n+
Answer» C. p– n+
Discussion
4.

A Schottky diode has __________

A. a gate terminal
B. aluminum-silicon junction
C. platinum gold junction
D. germanium-Arsenide junction
Answer» C. platinum gold junction
Discussion
5.

In the equilibrium state, the barrier potential across a unbiased silicon diode is _________

A. 0.3 V
B. 0.7 V
C. 1.3 V
D. 0 V
Answer» C. 1.3 V
Discussion
6.

A Schottky diode can be switchd off much faster than an equivalent p-n junction diode due to its

A. higher operating frequency
B. no recombination of charges
C. more compact structure
D. None of the mentioned
Answer» C. more compact structure
Discussion
7.

A power diode with small softness factor (S-factor) has

A. small oscillatory over voltages
B. large oscillatory over voltages
C. large peak reverse current
D. small peak reverse current
Answer» C. large peak reverse current
Discussion
8.

In the equilibrium state the barrier, potential across a unbiased germanium diode is __________

A. 0.3 V
B. 0.7 V
C. 1.7 V
D. 0 V
Answer» B. 0.7 V
Discussion
9.

Zener diodes allow a current to flow in the reverse direction, when the

A. voltage reaches above a certain value
B. temperature reaches above a certain value
C. current always flows in the reverse direction only
D. current cannot flow in the reverse direction
Answer» B. temperature reaches above a certain value
Discussion
10.

In case of an ideal power diode, the leakage current flows from

A. anode to cathode
B. cathode to anode
C. in both the directions
D. leakage current does not flow
Answer» E.
Discussion
11.

As compared to a p-n junction diode(of the same rating), a Schottky diode has ___________

A. higher cut-in voltage
B. lower reverse leakage current
C. higher operating frequency
D. higher switching time
Answer» D. higher switching time
Discussion
12.

The peak inverse current IP for a power diode is given by the expression

A. IP=t + di/dt
B. IP=t * log ⁡i
C. IP=t * di/dt
D. IP=t * ∫ t*i dt
Answer» D. IP=t * ∫ t*i dt
Discussion
13.

Which of the following is true in case of an unbiased p-n junction diode?

A. Diffusion does not take place
B. Diffusion of electrons & holes goes on infinitely
C. There is zero electrical potential across the junctions
D. Charges establish an electric field across the junctions
Answer» E.
Discussion
14.

Which of the following is true in case of a forward biased p-n junction diode?

A. The positive terminal of the battery sucks electrons from the p-region
B. The positive terminal of the battery injects electrons into the p-region
C. The negative terminal of the battery sucks electrons from the p-region
D. None of the above mentioned statements are true
Answer» B. The positive terminal of the battery injects electrons into the p-region
Discussion