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This section includes 4 Mcqs, each offering curated multiple-choice questions to sharpen your Electronic Devices and Circuits knowledge and support exam preparation. Choose a topic below to get started.
1. |
Transition capacitance is also called as _______ |
A. | diffusion capacitance |
B. | depletion capacitance |
C. | conductance capacitance |
D. | resistive capacitance |
Answer» C. conductance capacitance | |
2. |
The diffusion capacitance of a PN junction _______ |
A. | decreases with increasing current and increasing temperature |
B. | decreases with decreasing current and increasing temperature |
C. | increasing with increasing current and increasing temperature |
D. | doesnot depend on current and temperature |
Answer» C. increasing with increasing current and increasing temperature | |
3. |
The CT for an abrupt PN junction diode is ________ |
A. | C<sub>T</sub> = K/(V<sub>0</sub>+V<sub>B</sub>)<sup>1/2</sup> |
B. | C<sub>T</sub> = K/(V<sub>0</sub>+V<sub>B</sub>)<sup>-1/2</sup> |
C. | C<sub>T</sub> = K/(V<sub>0</sub>+V<sub>B</sub>)<sup>1/3</sup> |
D. | C<sub>T</sub> = K/(V<sub>0</sub>+V<sub>B</sub>)<sup>-1/3</sup> |
Answer» B. C<sub>T</sub> = K/(V<sub>0</sub>+V<sub>B</sub>)<sup>-1/2</sup> | |
4. |
A silicon PN junction diode under revers bias has depletion width of 10 m, relative permittivity is 11.7 and permittivity, 0 =8.85 10-12F/m. Then depletion capacitance /m2 =? |
A. | 0.1 F/m<sup>2</sup> |
B. | 1.7 F/m<sup>2</sup> |
C. | 10 F/m<sup>2</sup> |
D. | 0.5 F/m<sup>2</sup> |
Answer» D. 0.5 F/m<sup>2</sup> | |