Explore topic-wise MCQs in Engineering Physics.

This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Engineering Physics knowledge and support exam preparation. Choose a topic below to get started.

1.

From the I-V characteristics, calculate the resistance of the diode at I = 15 mA.

A. 10 Ω
B. 12 Ω
C. 14 Ω
D. 15 Ω
Answer» B. 12 Ω
Discussion
2.

The leakage current is measured in ________

A. A
B. mA
C. μA
D. nA
Answer» D. nA
Discussion
3.

The I-V characteristics of a p-n junction diode is shown. What is the resistance of the junction when a forward bias of 2 V is applied?

A. 20 Ω
B. 40 Ω
C. 60 Ω
D. 80 Ω
Answer» C. 60 Ω
Discussion
4.

The P-N junction is a non-ohmic device.

A. True
B. False
Answer» B. False
Discussion
5.

Which diode is designed to work under breakdown region?

A. Photodiode
B. Light Emitting Diode
C. Solar Cell
D. Zener diode
Answer» E.
Discussion
6.

The current produced in reverse-bias is called as __________

A. Reverse Current
B. Breakdown Current
C. Negative Current
D. Leakage Current
Answer» E.
Discussion
7.

The resistance of the semiconductor decreases in forward biased.

A. True
B. False
Answer» B. False
Discussion
8.

The Knee Voltage for germanium is _________

A. 0.1 V
B. 0.3 V
C. 0.7 V
D. 1.4 V
Answer» C. 0.7 V
Discussion
9.

The voltage at which forward bias current increases rapidly is called as ___________

A. Breakdown Voltage
B. Forward Voltage
C. Knee Voltage
D. Voltage barrier
Answer» D. Voltage barrier
Discussion
10.

In a P-N Junction, the depletion region is reduced when _________

A. P side is connected to the negative side of the terminal
B. P side is connected to the positive side of the terminal
C. N side is connected to the positive side of the terminal
D. Never reduced
Answer» C. N side is connected to the positive side of the terminal
Discussion