MCQOPTIONS
Saved Bookmarks
MCQOPTIONS
This section includes 12 Mcqs, each offering curated multiple-choice questions to sharpen your Analog Circuits knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
How is the metallurgical channel thickness between the gate and the substrate related to the doping concentration of the channel? |
| A. | Inversely proportional to the square root of the doping concentration |
| B. | Logarithmically related to the square root of the doping concentration |
| C. | Directly proportional to the square root of the doping concentration |
| D. | Exponentially related to the square root of the doping concentration |
| Answer» B. Logarithmically related to the square root of the doping concentration | |
| 2. |
A P-channel JFET is___________ |
| A. | Always ON |
| B. | Always OFF |
| C. | Depletion mode JFET |
| D. | Has an n-type substrate |
| Answer» C. Depletion mode JFET | |
| 3. |
An N-channel JFET is ___________ |
| A. | Always ON |
| B. | Always OFF |
| C. | Enhancement mode JFET |
| D. | Has a p-type substrate |
| Answer» B. Always OFF | |
| 4. |
When an N-channel JFET reaches pinch-off, the increase in the drain to source voltage results in shifting of the pinch-off position towards the ___________ |
| A. | Gate |
| B. | Drain |
| C. | Source |
| D. | Does not shift |
| Answer» D. Does not shift | |
| 5. |
How is the transconductance at saturation related to the pinch off voltage of the JFET? |
| A. | Inversely proportional |
| B. | Directly proportional |
| C. | Inverse-squarely related |
| D. | Directly and proportional to square of the pinch-off voltage |
| Answer» B. Directly proportional | |
| 6. |
The cut-off frequency of a JFET is ___________ |
| A. | linearly related to the transconductance of the JFET |
| B. | inversely proportional to the transconductance of the JFET |
| C. | exponentially related to the transconductance of the JFET |
| D. | logarithmically related to the transconductance of the JFET |
| Answer» B. inversely proportional to the transconductance of the JFET | |
| 7. |
The cut-off frequency of a JFET is that time when the magnitude of the input current is ___________ |
| A. | Greater than the output current |
| B. | Less than the output current |
| C. | Equal to the output current |
| D. | Twice the output current |
| Answer» D. Twice the output current | |
| 8. |
If the doping concentration of the gate increases, the internal pinch-off voltage ___________ |
| A. | Increases logarithmically |
| B. | Increases linearly |
| C. | Increases exponentially |
| D. | Decreases linearly |
| Answer» C. Increases exponentially | |
| 9. |
If channel thickness increases, the internal pinch-off voltage ___________ |
| A. | Decreases |
| B. | Increases |
| C. | Remains the same |
| D. | Increases logarithmically |
| Answer» C. Remains the same | |
| 10. |
The built-in barrier potential in a N-channel JFET is ___________ |
| A. | less than the internal pinch-off voltage |
| B. | equal to the internal pinch-off voltage |
| C. | greater than the internal pinch-off voltage |
| D. | not related to the internal pinch-off voltage |
| Answer» B. equal to the internal pinch-off voltage | |
| 11. |
The n-channel JFET, the pinch off voltage is ______________ |
| A. | not greater than 0 |
| B. | greater than or equal to 0 |
| C. | less than or equal to 0 |
| D. | not less than 0 |
| Answer» B. greater than or equal to 0 | |
| 12. |
JFET is a ______ carrier device. |
| A. | Unipolar |
| B. | Bipolar |
| C. | Minority |
| D. | Majority |
| Answer» E. | |