Neither inverting nor non-inverting

Assertion (A): In a two-transistor model the anode current is given by: \({I_A} = \frac{{{\alpha _2}{I_G} + {I_{CB{O_1}}} - {I_{CB{O_2}}}}}{{I + \left( {{\alpha _1} - {\alpha _2}} \right)}}\)Reason (R): The regenerative or Latching action due to positive feedback is demonstrated in a two-transistor model of a thyristor. It contains a pnp & a npn transistors.

Both (A) and (R) are true and (R) is the correct explanation of (A)

Both (A) and (R) are true, but (R) is not the correct explanation of (A)

In the circuit shown, the silicon BJT has β = 50. Assume VBE = 0.7 V and VCE(sat) = 0.2 V. Which one of the following statements is correct?

For RC = 20 kΩ, the BJT operates in the cut-off region

For RC = 1 kΩ, the BJT operates in the saturation region

For RC = 3 kΩ, the BJT operates in the saturation region

For RC = 20 kΩ, the BJT operates in the cut-off region

For RC = 20 kΩ, the BJT operates in the linear region

A BJT is in inverse active mode if

Both E-B junction and C-B junction are forward biased

E-B junction is reverse biased and C-B junction is forward biased.

Both E-B junction and C-B junction are forward biased

Both-E-B junction and C-B junction are reverse biased.

Operation of the device is very poor.

In a class B power amplifier, output is ________ of the input full cycle.

more than half but less than full

A good transimpedance amplifier has

low input impedance and high output impedance.

high input impedance and high output impedance.

high input impedance and low output impedance.

low input impedance and low output impedance.

For a zero degree phase shift, high impedance, and low output impedance, one should employ

Common Emitter (CE) configuration

Open Collector (OC) configuration

Common Collector (CC) configuration

Direction: Question consists of two statements, one labeled as the 'Assertion (A)' and the other as 'Reason (R)'. Examine these two statements carefully and select the answer to this question using the codes given below:Assertion (A): If we have two p-n-p and n-p-n transistors of identical construction, the n-p-n transistor will have a better frequency response characteristic compared to the p-n-p transistor.Reason (R): The diffusion constant of electrons is higher than that of holes.

Both A and R are individually true but R is not the correct explanation of A

Both A and R are individually true and R is the correct explanation of A

Both A and R are individually true but R is not the correct explanation of A

f1 is the lower half power frequency of a single stage amplifier. The lower half power frequency of n-stage amplifier is ______.

\(f_1 \sqrt{2^{\frac{1}{n}}-1}\)

\(\dfrac{f_1}{\sqrt{1-2^{\frac{1}{n}}}}\)

\(f_1 \sqrt{1-2^{\frac{1}{n}}}\)

\(\dfrac{f_1}{\sqrt{2^{\frac{1}{n}}-1}}\)

A BJT operates as a switch

in the active region of transfer characteristics

Assertion (A) : It is not possible to increase the overall voltage amplification by cascading common collector stages.Reason (R): The voltage gain of a common collector configuration is less than unity.

Both (A) and (R) are true, but (R) is not the correct explanation of (A)

Both (A) and (R) are true and (R) is the correct explanation of (A).

Both (A) and (R) are true, but (R) is not the correct explanation of (A)

In which of the following configurations, Miller effect capacitance is not a contributing concern for high-frequency applications?

Common emitter configuration only

Emitter follower configuration only

Both common base and emitter follower configurations

If TJ and TA are junction temp. and ambient temp respectively θJC, θCS and θSA are transistor thermal resistance, insulator thermal resistance and heat-sink thermal resistance respectively. The equation of maximum power dissipation is given by

\(P_D=\frac{T_A-T_J}{\theta_{JC} + \theta_{CS}+\theta_{SA}}\)

\(P_D=\frac{T_J+T_A}{\theta_{JC} + \theta_{CS}+\theta_{SA}}\)

\(P_D=\frac{T_J-T_A}{\theta_{JC} + \theta_{CS}+\theta_{SA}}\)

\(P_D=\frac{T_A-T_J}{\theta_{JC} + \theta_{CS}+\theta_{SA}}\)

\(P_D=\frac{T_J-T_A}{\theta_{JC} + \theta_{CS}-\theta_{SA}}\)

In a transistor amplifier, the purpose of capacitors is to ____________.

Couple or bypass a.c. Component

261 + Mcqs in Bipolar Junction Transistors in Electronics Page 3 McqOptions

101.	In BJT amplifier the emitter base junction and base collector junction are normally ______ and ______ biased.
A.	Forward, forward
B.	Forward, reverse
C.	Reverse, forward
D.	Reverse, Reverse
Answer» C. Reverse, forward

Discussion

102.	For the transistor circuit shown in the figure, when1. Vm > 0, transistor is OFF2. Vm ≤ 0 transistor is OFF3. \(I_B>\frac{I_C}{h_{FE}}\)transistor is ON4. \(I_B\le\frac{I_C}{h_{FE}}\) transistor is ON
A.	1, 2, 3 and 4
B.	1 and 2 only
C.	2 and 3 only
D.	3 and 4 only
Answer» D. 3 and 4 only

Discussion

103.	A common-emitter transistor amplifier has a collector load of 10 kΩ. If its hfe = 100 and hie = 2 kΩ (hre ≈ hoe ≈ 0), the voltage amplification of the amplifier is nearly equal to
A.	500
B.	200
C.	100
D.	50
Answer» B. 200

Discussion

104.	_____ is the rms value of rectangular voltage wave with an amplifier of 10 V
A.	11.2 V
B.	5.2 V
C.	7.7 V
D.	10 V
Answer» E.

Discussion

105.	A transistor works in three regions:i. Cut-offii. Activeiii. Saturation.While used as switch in digital logic gates, the regions it works in are:
A.	i and ii only
B.	ii and iii only
C.	i and iii only
D.	i, ii and iii
Answer» D. i, ii and iii

Discussion

106.	A two stage RC coupled amplifier has stage gains of 30 and 40. The overall gain is ?
A.	70
B.	120
C.	1200
D.	40
Answer» D. 40

Discussion

107.	For a transistor, the normal collector voltage is 12 V. If actually it is found to be 28 V, the trouble may be
A.	RL is open
B.	RE is open
C.	CE is shorted
D.	CE is open
Answer» C. CE is shorted

Discussion

108.	Each Transistor in Darlington pair (As shown in Fig.) has hfc = 100. Overall hFE of composite transistor neglecting leakage current is,
A.	10000
B.	10001
C.	10100
D.	10200
Answer» E.

Discussion

109.	A buffer is:
A.	Neither inverting nor non-inverting
B.	Inverting or non-iverting
C.	Always non-inverting
D.	Always inverting
Answer» C. Always non-inverting

Discussion

110.	If TA = 50°C, TJ = 200°C, and θJ – A = 100°C/W, the power that a transistor, 2N1701 can safely dissipate in free air will be
A.	0.5 W
B.	1.5 W
C.	2.5 W
D.	3.5 W
Answer» C. 2.5 W

Discussion

111.	Assertion (A): In a two-transistor model the anode current is given by: \({I_A} = \frac{{{\alpha _2}{I_G} + {I_{CB{O_1}}} - {I_{CB{O_2}}}}}{{I + \left( {{\alpha _1} - {\alpha _2}} \right)}}\)Reason (R): The regenerative or Latching action due to positive feedback is demonstrated in a two-transistor model of a thyristor. It contains a pnp & a npn transistors.
A.	Both (A) and (R) are true and (R) is the correct explanation of (A)
B.	Both (A) and (R) are true, but (R) is not the correct explanation of (A)
C.	(A) is true, but (R) is false
D.	(A) is false, but (R) is true
Answer» E.

Discussion

112.	In a Common Base Configuration, BJT has _______ input impedance and ________output impedance.
A.	high, high
B.	low, high
C.	low, low
D.	high, low
Answer» C. low, low

Discussion

113.	If the quality factor of a single-stage single-tuned amplifier is doubled, the bandwidth will
A.	Become four times
B.	Remain the same
C.	Become half
D.	Become double
Answer» C. Become half

Discussion

114.	A BJT is biased with a power supply of 12 V. For minimum heat dissipation, the drop across the transistor will be
A.	6V
B.	9V
C.	12V
D.	> 9 V but < 12 V
Answer» B. 9V

Discussion

115.	In the circuit shown, the silicon BJT has β = 50. Assume VBE = 0.7 V and VCE(sat) = 0.2 V. Which one of the following statements is correct?
A.	For RC = 1 kΩ, the BJT operates in the saturation region
B.	For RC = 3 kΩ, the BJT operates in the saturation region
C.	For RC = 20 kΩ, the BJT operates in the cut-off region
D.	For RC = 20 kΩ, the BJT operates in the linear region
Answer» C. For RC = 20 kΩ, the BJT operates in the cut-off region

Discussion

116.	If VCC = 18 V, voltage divider resistances R1 = 4.7 kΩ and R2 = 1500 Ω, what is the base bias voltage?
A.	8.70 V
B.	4.35 V
C.	2.90 V
D.	0.70 V
Answer» C. 2.90 V

Discussion

117.	A BJT is in inverse active mode if
A.	E-B junction is reverse biased and C-B junction is forward biased.
B.	Both E-B junction and C-B junction are forward biased
C.	Both-E-B junction and C-B junction are reverse biased.
D.	Operation of the device is very poor.
Answer» B. Both E-B junction and C-B junction are forward biased

Discussion

118.	In a certain transistor, the emitter current is 1.04 times the collector current. If the emitter current is 12 mA, calculate the base current.
A.	462 μA
B.	11.538 mA
C.	462 mA
D.	11.538 μA
Answer» B. 11.538 mA

Discussion

119.	In a class B power amplifier, output is ________ of the input full cycle.
A.	less than half
B.	half
C.	more than half but less than full
D.	full
Answer» C. more than half but less than full

Discussion

120.	In common collector configuration, the current amplification factor is:
A.	Δ
B.	β
C.	A
D.	γ
Answer» E.

Discussion

121.	A good transimpedance amplifier has
A.	low input impedance and high output impedance.
B.	high input impedance and high output impedance.
C.	high input impedance and low output impedance.
D.	low input impedance and low output impedance.
Answer» E.

Discussion

122.	For a transistorhie = 1 kΩ, hfe = 30, hre ≃ 0,hoe = 20 × 10-6 ℧ and RL = 2.5 kΩ The transistor is used in a single-stage CE amplifier. The voltage gain and power gain, respectively, are
A.	75 and 1750
B.	25 and 2250
C.	75 and 2250
D.	25 and 1750
Answer» D. 25 and 1750

Discussion

123.	For a zero degree phase shift, high impedance, and low output impedance, one should employ
A.	Common Emitter (CE) configuration
B.	Open Collector (OC) configuration
C.	Common Base (CB) configuration
D.	Common Collector (CC) configuration
Answer» E.

Discussion

124.	Direction: Question consists of two statements, one labeled as the 'Assertion (A)' and the other as 'Reason (R)'. Examine these two statements carefully and select the answer to this question using the codes given below:Assertion (A): If we have two p-n-p and n-p-n transistors of identical construction, the n-p-n transistor will have a better frequency response characteristic compared to the p-n-p transistor.Reason (R): The diffusion constant of electrons is higher than that of holes.
A.	Both A and R are individually true and R is the correct explanation of A
B.	Both A and R are individually true but R is not the correct explanation of A
C.	A is true but R is false
D.	A is false but R is true
Answer» B. Both A and R are individually true but R is not the correct explanation of A

Discussion

125.	For normal biasing, the emitter junction of BJT has:
A.	very high resistance
B.	high resistance
C.	low resistance
D.	no resistance
Answer» D. no resistance

Discussion

126.	In common emitter configuration, the current amplification factor is:
A.	β
B.	A
C.	Δ
D.	Γ
Answer» B. A

Discussion

127.	Input impedance of a FET is very large, hence it is used in
A.	Voltage measuring instrument
B.	Current measuring instrument
C.	Power measuring instrument
D.	None of the above
Answer» B. Current measuring instrument

Discussion

128.	For the transistor shown in Fig. β is 100, ID is 25 μA and the thermal voltage (VT) at room temperature is 25 mV. If Rs is negligible, the voltage gain of the amplifier is
A.	-8
B.	-50
C.	-100
D.	-200
Answer» E.

Discussion

129.	In a bipolar junction transistor, an increase in the magnitude of collector voltage increases the space-charge width at the output junction diode. This causes the effective base width to decrease. This effect is known as
A.	Hall effect
B.	Early effect
C.	Miller effect
D.	Zener effect
Answer» C. Miller effect

Discussion

130.	A transistor circuit is shown in the figure.Assume β = 100, RB = 200 kΩ, RC = 1 kΩ, VCC = 15 V, \({V_{B{E_{act}}}} = 0.7\;V,\;{V_{B{E_{sat}}}} = 0.8\;V\;and\;{V_{C{E_{sat}}}} = 0.2\;V.\)The transistor is operating in:
A.	Saturation
B.	Cut-off
C.	Normal active
D.	Reverse active
Answer» D. Reverse active

Discussion

131.	A transistor is connected in CE configuration with VCC = 10 V. The voltage drop across the 600 Ω resistor in the collector circuit is 0.6 V. If α = 0.98, the base current is nearly
A.	6.12 mA
B.	2.08 mA
C.	0.98 mA
D.	0.02 mA
Answer» E.

Discussion

132.	f1 is the lower half power frequency of a single stage amplifier. The lower half power frequency of n-stage amplifier is ______.
A.	\(f_1 \sqrt{2^{\frac{1}{n}}-1}\)
B.	\(\dfrac{f_1}{\sqrt{1-2^{\frac{1}{n}}}}\)
C.	\(f_1 \sqrt{1-2^{\frac{1}{n}}}\)
D.	\(\dfrac{f_1}{\sqrt{2^{\frac{1}{n}}-1}}\)
Answer» E.

Discussion

133.	A BJT operates as a switch
A.	in the active region of transfer characteristics
B.	with no signal condition
C.	under small-signal conditions
D.	under large-signal conditions
Answer» E.

Discussion

134.	Currents in the three terminals of a transistor are mostly diffusion currents which are related by the minority carrier distribution in the base region. Which of the following statements are correct?A) The applied voltages control the boundary densities through the term exp(qV / kT)B) The base current is the difference between the emitter and collector currentsC) In order to maximize emitter resistance, the emitter contact is usually made directly on top of the emitterD) Emitter Bandgap narrowing increases current gainE) Emitter and collector currents are given by the minority density gradients at the junction boundariesChoose the most appropriate answer from the options given below:
A.	B, C, D only
B.	A, B, E only
C.	C, B, E only
D.	D, E, A only
Answer» C. C, B, E only

Discussion

135.	For BJT to act as an amplifier, which operating region is prefer
A.	Subthreshold
B.	Saturation
C.	Cutoff
D.	Linear
Answer» E.

Discussion

136.	A signal that is applied with equal strength to both inputs of a differential amplifier or an operational amplifier
A.	common mode signal
B.	common emitter circuit
C.	common ratio signal
D.	none of the above
Answer» B. common emitter circuit

Discussion

137.	In Bipolar junction transistors, the type of configuration which will give both voltage gain and current gain is
A.	Common collector
B.	Common Base
C.	Common Emitter
D.	None of the above
Answer» D. None of the above

Discussion

138.	Assertion (A) : It is not possible to increase the overall voltage amplification by cascading common collector stages.Reason (R): The voltage gain of a common collector configuration is less than unity.
A.	Both (A) and (R) are true and (R) is the correct explanation of (A).
B.	Both (A) and (R) are true, but (R) is not the correct explanation of (A)
C.	(A) is true, but (R) is false.
D.	(A) false, but (R) is true.
Answer» B. Both (A) and (R) are true, but (R) is not the correct explanation of (A)

Discussion

139.	Common emitter DC current gain of the transistor is 100. The current through the 10 V Zener diode (assuming VBE of the transistor is 0.7 V) is:
A.	10.8 mA
B.	19.3 mA
C.	20 mA
D.	40 mA
Answer» B. 19.3 mA

Discussion

140.	NPN and PNP are types of:
A.	FETs
B.	thyristors
C.	diodes
D.	transistors
Answer» E.

Discussion

141.	______ transistor/s are required for single stage amplification.
A.	1
B.	2
C.	4
D.	3
Answer» B. 2

Discussion

142.	In which of the following configurations, Miller effect capacitance is not a contributing concern for high-frequency applications?
A.	Common emitter configuration only
B.	Common base configuration only
C.	Emitter follower configuration only
D.	Both common base and emitter follower configurations
Answer» E.

Discussion

143.	For the CE (Common emitter) circuit shown, what will be the value of IE and VCE?
A.	3 mA, 3 V
B.	4 mA, 4 V
C.	3.02 mA, 4.2 V
D.	3.02 mA, 4 V
Answer» E.

Discussion

144.	In NPN transistor, when emitter junction is forward biased and collector junction is reverse biased, the transistor will operate in
A.	Active region
B.	Cut off region
C.	Saturation region
D.	Inverted region
Answer» B. Cut off region

Discussion

145.	For the circuit shown in the figure below, it is given that \({V_{CE}} = \frac{{{V_{CC}}}}{2}\). The transistor has β = 29 and VBE = 0.7 V when the B-E junction is forward biased.For this circuit, the value of \(\frac{{{R_B}}}{R}\) is
A.	43
B.	92
C.	121
D.	129
Answer» E.

Discussion

146.	If TJ and TA are junction temp. and ambient temp respectively θJC, θCS and θSA are transistor thermal resistance, insulator thermal resistance and heat-sink thermal resistance respectively. The equation of maximum power dissipation is given by
A.	\(P_D=\frac{T_J+T_A}{\theta_{JC} + \theta_{CS}+\theta_{SA}}\)
B.	\(P_D=\frac{T_J-T_A}{\theta_{JC} + \theta_{CS}+\theta_{SA}}\)
C.	\(P_D=\frac{T_A-T_J}{\theta_{JC} + \theta_{CS}+\theta_{SA}}\)
D.	\(P_D=\frac{T_J-T_A}{\theta_{JC} + \theta_{CS}-\theta_{SA}}\)
Answer» C. \(P_D=\frac{T_A-T_J}{\theta_{JC} + \theta_{CS}+\theta_{SA}}\)

Discussion

147.	A Darlington pair and an emitter follower have the same
A.	input impedance
B.	current gain
C.	voltage gain
D.	power gain
Answer» D. power gain

Discussion

148.	If Ri1 for Amp 1 is 1 kΩ, Ri2 is 1 MΩ, A1 = 20 and R01 = 50Ω, A2 = 20 and R02 = 1kΩThen what is the total gain of the system?
A.	400
B.	331
C.	3.31
D.	33.1
Answer» B. 331

Discussion

149.	In a transistor amplifier, the purpose of capacitors is to ____________.
A.	Couple or bypass a.c. Component
B.	Provide biasing
C.	Cool the transistor
D.	Protect the transistor
Answer» B. Provide biasing

Discussion

150.	Name the missing part ‘a’ in the diagram of a theatre sound system.Given:b: wooferc: tweeter
A.	Conductor
B.	Amplifier
C.	Transistor
D.	Tweeter
Answer» C. Transistor

Discussion

Explore topic-wise MCQs in Electronics.

In BJT amplifier the emitter base junction and base collector junction are normally ______ and ______ biased.

For the transistor circuit shown in the figure, when1. Vm > 0, transistor is OFF2. Vm ≤ 0 transistor is OFF3. \(I_B>\frac{I_C}{h_{FE}}\)transistor is ON4. \(I_B\le\frac{I_C}{h_{FE}}\) transistor is ON

A common-emitter transistor amplifier has a collector load of 10 kΩ. If its hfe = 100 and hie = 2 kΩ (hre ≈ hoe ≈ 0), the voltage amplification of the amplifier is nearly equal to

_____ is the rms value of rectangular voltage wave with an amplifier of 10 V

A transistor works in three regions:i. Cut-offii. Activeiii. Saturation.While used as switch in digital logic gates, the regions it works in are:

A two stage RC coupled amplifier has stage gains of 30 and 40. The overall gain is ?

For a transistor, the normal collector voltage is 12 V. If actually it is found to be 28 V, the trouble may be

Each Transistor in Darlington pair (As shown in Fig.) has hfc = 100. Overall hFE of composite transistor neglecting leakage current is,

A buffer is:

If TA = 50°C, TJ = 200°C, and θJ – A = 100°C/W, the power that a transistor, 2N1701 can safely dissipate in free air will be

In a Common Base Configuration, BJT has _______ input impedance and ________output impedance.

If the quality factor of a single-stage single-tuned amplifier is doubled, the bandwidth will

A BJT is biased with a power supply of 12 V. For minimum heat dissipation, the drop across the transistor will be

In the circuit shown, the silicon BJT has β = 50. Assume VBE = 0.7 V and VCE(sat) = 0.2 V. Which one of the following statements is correct?

If VCC = 18 V, voltage divider resistances R1 = 4.7 kΩ and R2 = 1500 Ω, what is the base bias voltage?

A BJT is in inverse active mode if

In a certain transistor, the emitter current is 1.04 times the collector current. If the emitter current is 12 mA, calculate the base current.

In a class B power amplifier, output is ________ of the input full cycle.

In common collector configuration, the current amplification factor is:

A good transimpedance amplifier has

For a transistorhie = 1 kΩ, hfe = 30, hre ≃ 0,hoe = 20 × 10-6 ℧ and RL = 2.5 kΩ The transistor is used in a single-stage CE amplifier. The voltage gain and power gain, respectively, are

For a zero degree phase shift, high impedance, and low output impedance, one should employ

For normal biasing, the emitter junction of BJT has:

In common emitter configuration, the current amplification factor is:

Input impedance of a FET is very large, hence it is used in

For the transistor shown in Fig. β is 100, ID is 25 μA and the thermal voltage (VT) at room temperature is 25 mV. If Rs is negligible, the voltage gain of the amplifier is

In a bipolar junction transistor, an increase in the magnitude of collector voltage increases the space-charge width at the output junction diode. This causes the effective base width to decrease. This effect is known as

A transistor circuit is shown in the figure.Assume β = 100, RB = 200 kΩ, RC = 1 kΩ, VCC = 15 V, \({V_{B{E_{act}}}} = 0.7\;V,\;{V_{B{E_{sat}}}} = 0.8\;V\;and\;{V_{C{E_{sat}}}} = 0.2\;V.\)The transistor is operating in:

A transistor is connected in CE configuration with VCC = 10 V. The voltage drop across the 600 Ω resistor in the collector circuit is 0.6 V. If α = 0.98, the base current is nearly

f1 is the lower half power frequency of a single stage amplifier. The lower half power frequency of n-stage amplifier is ______.

A BJT operates as a switch

For BJT to act as an amplifier, which operating region is prefer

A signal that is applied with equal strength to both inputs of a differential amplifier or an operational amplifier

In Bipolar junction transistors, the type of configuration which will give both voltage gain and current gain is

Assertion (A) : It is not possible to increase the overall voltage amplification by cascading common collector stages.Reason (R): The voltage gain of a common collector configuration is less than unity.

Common emitter DC current gain of the transistor is 100. The current through the 10 V Zener diode (assuming VBE of the transistor is 0.7 V) is:

NPN and PNP are types of:

______ transistor/s are required for single stage amplification.

In which of the following configurations, Miller effect capacitance is not a contributing concern for high-frequency applications?

For the CE (Common emitter) circuit shown, what will be the value of IE and VCE?

In NPN transistor, when emitter junction is forward biased and collector junction is reverse biased, the transistor will operate in

For the circuit shown in the figure below, it is given that \({V_{CE}} = \frac{{{V_{CC}}}}{2}\). The transistor has β = 29 and VBE = 0.7 V when the B-E junction is forward biased.For this circuit, the value of \(\frac{{{R_B}}}{R}\) is

If TJ and TA are junction temp. and ambient temp respectively θJC, θCS and θSA are transistor thermal resistance, insulator thermal resistance and heat-sink thermal resistance respectively. The equation of maximum power dissipation is given by

A Darlington pair and an emitter follower have the same

If Ri1 for Amp 1 is 1 kΩ, Ri2 is 1 MΩ, A1 = 20 and R01 = 50Ω, A2 = 20 and R02 = 1kΩThen what is the total gain of the system?

In a transistor amplifier, the purpose of capacitors is to ____________.

Name the missing part ‘a’ in the diagram of a theatre sound system.Given:b: wooferc: tweeter

In BJT amplifier the emitter base junction and base collector junction are normally and biased.

In a Common Base Configuration, BJT has _ input impedance and __output impedance.