MCQOPTIONS
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MCQOPTIONS
This section includes 10 Mcqs, each offering curated multiple-choice questions to sharpen your Linear Integrated Circuit knowledge and support exam preparation. Choose a topic below to get started.
| 1. |
IN_CRZOCHRALSKI_CRYSTAL_GROWTH_PROCESS,_THE_MATERIALS_ARE_HEATED_UP_TO?$ |
| A. | 950<sup>o</sup>c |
| B. | 1000 <sup>o</sup>c |
| C. | 1420<sup>o</sup>c |
| D. | 1200<sup>o</sup>c |
| Answer» D. 1200<sup>o</sup>c | |
| 2. |
If the thickness of wafer after all polishing steps in silicon wafer preparation is 23-40 mils. Find its raw cut slice thickness?$ |
| A. | 16-32 mils |
| B. | 23-40 mils |
| C. | 8-12 mils |
| D. | None of the mentioned |
| Answer» B. 23-40 mils | |
| 3. |
How_to_obtain_silicon_ingots_of_10-15cm_diameter?$ |
| A. | By crystal pulling process |
| B. | By crystal melting process |
| C. | By crystal growing process |
| D. | All of the mentioned |
| Answer» B. By crystal melting process | |
| 4. |
Oxidation process in silicon planar technology is also called a? |
| A. | Photo oxidation |
| B. | Silicon oxidation |
| C. | Vapour oxidation |
| D. | Thermal oxidation |
| Answer» E. | |
| 5. |
At what temperature should the oxidation process be carried out to get an oxide film of thickness 0.02 to 2µm?$ |
| A. | 0-105<sup>o</sup>c |
| B. | 950-1115<sup>o</sup>c |
| C. | 200-850<sup>o</sup>c |
| D. | 350-900<sup>o</sup>c |
| Answer» C. 200-850<sup>o</sup>c | |
| 6. |
Mention the chemical reaction for oxidation process |
| A. | Si + 2H<sub>2</sub>O –> SiO<sub>2</sub> + 2H<sub>2</sub> |
| B. | Si + O<sub>2</sub> –> SiO<sub>2</sub> |
| C. | 2Si + 2H<sub>2</sub>O –> 2SiO<sub>2</sub> + 2H<sub>2</sub> |
| D. | 2Si + 2H<sub>2</sub>O + 2O<sub>2</sub> –> 2SiO<sub>2</sub> + 2H<sub>2</sub> + O<sub>2</sub> |
| Answer» B. Si + O<sub>2</sub> ‚Äö√Ñ√∂‚àö√ë‚àö¬®> SiO<sub>2</sub> | |
| 7. |
Why oxidation process is required? |
| A. | To protect against contamination |
| B. | To use it for fabrication various components |
| C. | To prevent diffusion of impurities |
| D. | All of the mentioned |
| Answer» E. | |
| 8. |
Which of the following is used to obtain silicon crystal structure while fabricating Integrating Circuits? |
| A. | Oxidation |
| B. | Epitaxial growth |
| C. | Photolithography |
| D. | Silicon wafer preparations |
| Answer» C. Photolithography | |
| 9. |
Where are the silicon wafers placed in the reaction chamber for the epitaxial growth process? |
| A. | Cup |
| B. | Boats |
| C. | Ingots |
| D. | Crucible |
| Answer» C. Ingots | |
| 10. |
Which component is added to the p-type material in order to get the impurity concentration in epitaxial films? |
| A. | Bi-borane (B<sub>2</sub>H<sub>2</sub>) |
| B. | Phosphine (PH<sub>3</sub>) |
| C. | Boron chloride (BCl<sub>3</sub>) |
| D. | Phosphorous pentoxide (P<sub>2</sub>O<sub>5</sub>) |
| Answer» B. Phosphine (PH<sub>3</sub>) | |