Explore topic-wise MCQs in Linear Integrated Circuit.

This section includes 6 Mcqs, each offering curated multiple-choice questions to sharpen your Linear Integrated Circuit knowledge and support exam preparation. Choose a topic below to get started.

1.

Which method is most suitable for silicon crystal growth in silicon wafer preparation?

A. Float zone process
B. Bridgeman-Stockbarger method
C. Czochralski crystal growth process
D. Laser heated pedestal growth
Answer» D. Laser heated pedestal growth
Discussion
2.

In which method shallow penetration of dopants is possible?

A. Ion implantation
B. Vertical diffusion
C. Horizontal diffusion
D. Dopants diffusion
Answer» B. Vertical diffusion
Discussion
3.

During ion implantation process (before the ion strike the wafer) the accelerated ions are passed through

A. Strong Electric field
B. Strong Magnetic field
C. Strong Electric and Magnetic Field
D. None of the mentioned
Answer» C. Strong Electric and Magnetic Field
Discussion
4.

What will be the next step after slicing (process) silicon wafers?

A. All of the mentioned
B. Lapping
C. Polishing
D. Chemical
Answer» B. Lapping
Discussion
5.

Pick out the incorrect statement
Aluminium is usually used for metallization of most IC as it offers

A. Relatively a good conductor
B. High resistance
C. Good mechanical bond with silicon
D. Deposition of aluminium film using vacuum deposition
Answer» D. Deposition of aluminium film using vacuum deposition
Discussion
6.

The major disadvantage of PN-junction isolation technique is:

A. Formation of Parasitic Resistance
B. Formation of Parasitic Capacitance
C. Formation of Isolation island
D. None of the mentioned
Answer» C. Formation of Isolation island
Discussion