1.

which of the following statements are true about BJT? (i) It has more power handling capability than MOSFET (ii) Has higher switching speed than IGBT and MOSFET (iii) Has low on state conduction resistance (iv) Has second breakdown voltage problem

A. All are true
B. (i), (ii), (iii) and (iv)
C. (i), (iii) and (iv)
D. (ii), (iii) and (iv)
Answer» D. (ii), (iii) and (iv)


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