Suppose a 'n'-type wafer is creatd by doping \[Si\]crystal having \[5\times {{10}^{28}}atoms/{{m}^{3}}\] with 1 ppm concentration of As. On the surface 200 ppm Boron is added to create ?P' region in this wafer. Considering \[{{n}_{i}}=1.5\times {{10}^{6}}\,{{m}^{-3}}\] calculate the density of the minority charge carriers in the p regions.

• A. \[2.25\times {{10}^{7}}/{{m}^{3}}\]
• B. \[1.12\times {{10}^{3}}/{{m}^{3}}\]
• C. \[3.11\times {{10}^{6}}/{{m}^{3}}\]
• D. \[2.11\times {{10}^{5}}/{{m}^{3}}\]