Pure \[Si\] at \[500K\] has equal number of electron \[({{n}_{e}})\] and hole \[({{n}_{h}})\] concentrations of \[1.5\times {{10}^{16}}{{m}^{-3}}.\] Doping by indium increases \[{{n}_{h}}\] to \[4.5\times {{10}^{22}}{{m}^{-3}}.\] The doped semiconductor is of

• A. n-type with electron concentration \[{{n}_{e}}=5\times {{10}^{22}}{{m}^{-3}}\]
• B. p-type with electron concentration \[{{n}_{e}}=2.5\times {{10}^{10}}{{m}^{-3}}\]
• C. n-type with electron concentration \[{{n}_{e}}=2.5\times {{10}^{23}}{{m}^{-3}}\]
• D. p-type having electron concentration \[{{n}_{e}}=5\times {{10}^{9}}{{m}^{-3}}\]