MCQOPTIONS
Saved Bookmarks
| 1. |
Population inversion in semiconductor laser diode is achieved by: |
| A. | Lightly doping p and n sides |
| B. | Introducing trap centres on p and n sides |
| C. | Heavily doping p and n sides |
| D. | Reverse biasing the junction |
| Answer» C. Heavily doping p and n sides | |