1.

For silicon oxide etching, usually ______________ is used.

A. nitric acid and hydrofluoric acid (HF)
B. mixture of HF and ammonium fluoride (NH4F)
C. H<sub>3</sub>PO<sub>4</sub>
D. Mixture of HPO<sub>4</sub>, HNO (nitroxyl), Acetic acid, water
Answer» C. H<sub>3</sub>PO<sub>4</sub>


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