At T = 300 K, the bandgap and the intrinsic carrier concentration of GaAs are 1.42 eV and 106 cm-3, respectively. In order to generate electron-hole pairs in GaAs, which one of the wavelength (\({{\rm{\lambda }}_c}\)) ranges of incident radiation, is most suitable?(Given that: Plank’s constant is 6.62 × 10-34 J-s, the velocity of light is 3 × 1010 cm/s and charge of an electron is 1.6 × 10-19 C)

• A. 0.42 μm < \({{\rm{\lambda }}_c}\)< 0.87 μm
• B. 0.87 μm < \({{\rm{\lambda }}_c}\)< 1.42 μm
• C. 1.42 μm < \({{\rm{\lambda }}_c}\)< 1.62 μm
• D. 1.62 μm < \({{\rm{\lambda }}_c}\)< 6.62 μm