at room temperature intrinsic carrier concentration is higher in germanium than in silicon because __________.

Atomic number of Ge is larger than in Si

Carrier mobilities are higher Ge than in Si

energy gap in Ge is smaller than that in Si

Atomic weight of Ge is larger than in Si

at room temperature intrinsic carrier concentration is higher in germa

1.	at room temperature intrinsic carrier concentration is higher in germanium than in silicon because __________.
A.	Carrier mobilities are higher Ge than in Si
B.	energy gap in Ge is smaller than that in Si
C.	Atomic number of Ge is larger than in Si
D.	Atomic weight of Ge is larger than in Si
Answer» C. Atomic number of Ge is larger than in Si