Assertion (A): A high electron mobility transistor is based upon modulation-doped (GaAs - AlGaAs) single heterojunction structure.Reason (R): HEMT shows a very high noise figure and very low gain at very high microwave frequencies up to 70 GHz.

Question

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(A) is false, but (R) is true

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Both (A) and (R) are true and (R) is the correct explanation of (A)

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Both (A) and (R) are true, but (R) is not the correct explanation of (A)

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(A) is true, but (R) is false

1.	Assertion (A): A high electron mobility transistor is based upon modulation-doped (GaAs - AlGaAs) single heterojunction structure.Reason (R): HEMT shows a very high noise figure and very low gain at very high microwave frequencies up to 70 GHz.
A.	Both (A) and (R) are true and (R) is the correct explanation of (A)
B.	Both (A) and (R) are true, but (R) is not the correct explanation of (A)
C.	(A) is true, but (R) is false
D.	(A) is false, but (R) is true
Answer» D. (A) is false, but (R) is true

Assertion (A): A high electron mobility transistor is based upon modulation-doped (GaAs - AlGaAs) single heterojunction structure.Reason (R): HEMT shows a very high noise figure and very low gain at very high microwave frequencies up to 70 GHz.

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