A potential difference of 2V is applied between the opposite faces of a Ge crystal plate of area 1 cm2 and thickness 0.5 mm. If the concentration of electrons in Ge is 2 ´ 1019/m3 and mobilities of electrons and holes are \[0.36\frac{{{m}^{2}}}{volt-\sec }\] and \[0.14\frac{{{m}^{2}}}{volt-\sec }\] respectively, then the current flowing through the plate will be

• A.            0.25 A                                      
• B.            0.45 A
• C.            0.56 A 
• D.            0.64 A